Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
Catherine Langpoklakpam, Yi‐Kai Hsiao, Edward Yi Chang, Chun-Hsiung Lin, Hao‐Chung Kuo
Topics & Concepts
High-electron-mobility transistorPassivationMaterials scienceOptoelectronicsComposite numberBreakdown voltageVoltageEngineering physicsComposite materialElectrical engineeringLayer (electronics)EngineeringTransistorGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSilicon Carbide Semiconductor Technologies