Gate-Tunable Superconductor-Semiconductor Parametric Amplifier
Duc Phan, P. Falthansl-Scheinecker, U. K. Mishra, William M. Strickland, D. Langone, Javad Shabani, Andrew Higginbotham
Abstract
We build a parametric amplifier with a Josephson field-effect transistor (JoFET) as the active element. The resonant frequency of the device is field-effect tunable over a range of $2\phantom{\rule{0.2em}{0ex}}\mathrm{GHz}$. The JoFET amplifier has $20\phantom{\rule{0.2em}{0ex}}\mathrm{dB}$ of gain, $4\phantom{\rule{0.2em}{0ex}}\mathrm{MHz}$ of instantaneous bandwidth, and a 1-dB compression point of $\ensuremath{-}125.5\phantom{\rule{0.2em}{0ex}}\mathrm{dBm}$ when operated at a fixed resonance frequency.
Topics & Concepts
Parametric oscillatorAmplifierPhysicsParametric statisticsSuperconductivityField-effect transistorTransistorAtomic physicsOptoelectronicsCondensed matter physicsOpticsVoltageQuantum mechanicsCMOSStatisticsMathematicsPhysics of Superconductivity and MagnetismQuantum and electron transport phenomenaQuantum Information and Cryptography