Accurate estimation of interfacial thermal conductance between silicon and diamond enabled by a machine learning interatomic potential
Ali Rajabpour, Bohayra Mortazavi, Pedram Mirchi, Julien El Hajj, Yangyu Guo, Xiaoying Zhuang, Samy Mérabia
Abstract
Thermal management at silicon-diamond interface is critical for advancing high-performance electronic and optoelectronic devices. In this study, we calculate the interfacial thermal conductance between silicon and diamond using a computationally efficient machine learning (ML) interatomic potential trained on density functional theory (DFT) data. Using non-equilibrium molecular dynamics (NEMD) simulations, we compute the interfacial thermal conductance (ITC) for various system sizes. Our results reveal an extremely close agreement with experimental data than those obtained using traditional semi-empirical potentials such as Tersoff and Brenner which overestimate ITC. In addition, we analyze the frequency-dependent heat transfer spectrum, providing insights into the contributions of different phonon modes to the interfacial thermal conductance. The ML potential accurately captures the phonon dispersion relations and lifetimes, in good agreement with DFT calculations and experimental observations. It is shown that the Tersoff potential predicts higher phonon group velocities and phonon lifetimes compared to the DFT results. Furthermore, it predicts higher interfacial bonding strength, which is consistent with higher interfacial thermal conductance as compared to the ML potential. This study highlights the use of ML interatomic potentials to improve the accuracy and computational efficiency of thermal transport simulations of complex material interface systems.