Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
Yusaku Magari, S. G. Mehadi Aman, Daichi Koretomo, Kentaro Masuda, Kenta Shimpo, Hisao Makino, Mutsumi Kimura, Mamoru Furuta
Abstract
, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and poly(ethylene naphthalate) substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronic applications.
Topics & Concepts
Materials scienceSchottky barrierSchottky diodeX-ray photoelectron spectroscopySubstrate (aquarium)Band gapOptoelectronicsAnalytical Chemistry (journal)DiodeChemistryGeologyOceanographyPhysicsNuclear magnetic resonanceChromatographyThin-Film Transistor TechnologiesZnO doping and propertiesTransition Metal Oxide Nanomaterials