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Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing

Fenglin Guo, Chen Shao, Xiufang Chen, Xiejian Xie, Xianglong Yang, Xiaobo Hu, Xiangang Xu

2022Materials Science in Semiconductor Processing23 citationsDOI

Topics & Concepts

LappingWaferMaterials sciencePolishingChemical-mechanical planarizationComposite materialResidual stressFlatness (cosmology)Scanning electron microscopeOptoelectronicsOpticsCosmologyPhysicsQuantum mechanicsAdvanced Surface Polishing TechniquesSilicon Carbide Semiconductor TechnologiesAluminum Alloys Composites Properties
Shape modulation due to sub-surface damage difference on N-type 4H–SiC wafer during lapping and polishing | Litcius