Influence of Mo doping on interfacial charge carrier dynamics in photoelectrochemical water oxidation on BiVO<sub>4</sub>
Xiaofeng Wu, F. Palacio, Zheng Qi, Marcus Einert, Chuanmu Tian, Clément Maheu, Kangle Lv, Jan P. Hofmann
Abstract
Intensity of photocurrent during water oxidation in BiVO 4 is predominantly limited by charge transfer resistance ( R ct ), rather than semiconductor bulk resistance ( R bulk ). Mo doping of BiVO 4 can slightly reduce R bulk but obviously decreases R ct .
Topics & Concepts
PhotocurrentDopingSemiconductorMaterials scienceCharge (physics)Charge carrierChemical physicsOptoelectronicsChemistryPhysicsQuantum mechanicsAdvanced Photocatalysis TechniquesGas Sensing Nanomaterials and SensorsCopper-based nanomaterials and applications