Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET
Masakazu Baba, Takeshi Tawara, Tadao Morimoto, Shinsuke Harada, Manabu Takei, Hiroshi Kimura
Abstract
We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> A of 3.3 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at room temperature (RT) and 6.2 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 175 °C. The small reverse recovery charge of SJ devices at RT and 175 °C was realized by injection level suppression. Owing to these advantages, superior total power loss was estimated when the SJ-devices were operated as a half-bridge synchronous rectifier.