First-principle investigation of LiSrX (X=P and As) half-Heusler semiconductor compounds
A. Azouaoui, A. Harbi, M. Moutaabbid, Mohamed Idiri, A. eddiai, N. Benzakour, A. Hourmatallah, K. Bouslykhane, R. Masrour, A. Rezzouk
Topics & Concepts
Materials scienceSemiconductorBand gapFigure of meritThermoelectric effectPhononGround stateCondensed matter physicsDopingDispersion (optics)Attenuation coefficientDensity functional theoryAbsorption (acoustics)Direct and indirect band gapsOptoelectronicsOpticsPhysicsAtomic physicsThermodynamicsComputational chemistryChemistryComposite materialHeusler alloys: electronic and magnetic propertiesAdvanced Thermoelectric Materials and Devices2D Materials and Applications