Bound-States-in-Continuum Hybrid Integration of 2D Platinum Diselenide on Silicon Nitride for High-Speed Photodetectors
Yi Wang, Zejie Yu, Zunyue Zhang, Beilei Sun, Yeyu Tong, Jianbin Xu, Xiankai Sun, Hon Ki Tsang
Abstract
Hybrid integration of two-dimensional (2D) materials holds great promise for realizing novel optoelectronic components on planar dielectric waveguides. Functional devices based on 2D layered transition metal dichalcogenides (TMDs) offer the advantages of low dark current and high speed. In this work, we propose and experimentally demonstrate a high-speed hybrid integrated PtSe2 on silicon nitride waveguide photodetector. The light is guided in the silicon nitride channel by a structure based on the principle of bound states in the continuum (BICs). The BIC-based hybrid integration scheme offers a completely planar surface for the hybrid integration. The PtSe2 waveguide photodetector has a responsivity of ∼12 mA/W at a bias voltage of 8 V with a dark current of 317 nA. The optical impulse response measurement yields a 3 dB bandwidth of 35 GHz, demonstrating the potential of this 2D material for high-speed optoelectronic devices.