Litcius/Paper detail

Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

Saisai Wang, Jin Wang, Ting Zhi, Junjun Xue, Dunjun Chen, Lianhui Wang, Rong Zhang

2023Physics Reports28 citationsDOI

Topics & Concepts

PhysicsElectronOptoelectronicsQuantum tunnellingEngineering physicsElectrical engineeringQuantum mechanicsEngineeringSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignQuantum and electron transport phenomena
Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature | Litcius