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3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from −50°C to 200°C and Supply Voltage Range from 3.9 to 24V

Chenu-Hsing Liao, Shang-Hsien Yang, Meng-Yin Liao, Kai-Cheng Chung, Neha Kumari, Ke‐Horng Chen, Yin-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Ying‐Zong Juang

202019 citationsDOI

Abstract

The demand for automotive electronics is increasing in autonomous-driving electric vehicles. Automotive electronics use high-power-density DC-DC converters that are required to withstand extreme operating temperatures up to 200°C. As depicted in the top left of Fig. 3.8.1, conventional bandgap and CMOS reference-voltage circuits have a lower operating temperature [1]-[8]. Although power consumption can be effectively reduced from 2.6nW [2] to 192pW [8], the reference-voltage circuits are not suitable for high-power-density applications due to the limited temperature range.

Topics & Concepts

Bandgap voltage referenceVoltageElectrical engineeringElectronic circuitAutomotive industryMaterials scienceAtmospheric temperature rangeConvertersWide-bandgap semiconductorPower (physics)Power electronicsAutomotive electronicsElectronicsOperating temperatureRange (aeronautics)CMOSPower densityLow voltageOptoelectronicsVoltage referenceEngineeringDropout voltagePhysicsMeteorologyComposite materialQuantum mechanicsAerospace engineeringSemiconductor materials and devicesGaN-based semiconductor devices and materialsAdvancements in Semiconductor Devices and Circuit Design
3.8 A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from −50°C to 200°C and Supply Voltage Range from 3.9 to 24V | Litcius