Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
Shohei Sekiguchi, Min-Ju Ahn, T. Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
Abstract
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to saturate below 18K, similar to transistors with non-zero body factor in the literature, indicating that the body factor is not related to the SS saturation phenomena at very low temperatures.
Topics & Concepts
Silicon on insulatorMOSFETSubthreshold swingMaterials scienceSubthreshold conductionSiliconTransistorNanowireOptoelectronicsSaturation (graph theory)Subthreshold slopeSilicon nanowiresCondensed matter physicsElectrical engineeringPhysicsVoltageEngineeringMathematicsCombinatoricsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications