Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices
Shuting Wang, Xueer Ning, Aize Hao, Ruqi Chen
Topics & Concepts
Materials scienceLayer (electronics)NanoparticleResistive random-access memoryOptoelectronicsThermal conductionMetalNanotechnologyElectrical conductorNon-volatile memoryChemical engineeringVoltageComposite materialElectrical engineeringMetallurgyEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials