High-Performance Stretchable Organic Field-Effect Transistor Fabricated with an Ionic-Gel Dielectric
Wei Shi, Song Chen, Xueling Yan, Ziheng Lin, Zelin Liu, Lan Liu
Abstract
The intrinsically stretchable organic field-effect transistor (OFET) is an essential component of advanced stretchable electronics; however, the wide application of OFET devices still faces challenges of low stretchability and high power consumption. Here, the bilayer structure thermoplastic polyurethane (TPU)-[EMIM][BF 4 ]/TPU with high areal capacitance (1.27 μF cm –2 ) was developed as a stretchable dielectric to fabricate a stretchable OFET with a low-operating voltage and a low-leakage current (<10 –6 A). Besides, the intrinsically stretchable active layer was fabricated by blending poly(3-hexylthiophene) with polystyrene- block -poly(ethylene- ran -butylene)- block -polystyrene to obtain an efficient high-performance OFET. The effects of an imidazolium-based ionic gel with different anion sizes on dielectric layer properties were studied; the as-developed OFET exhibited a high charge-carrier mobility μ of 5.19 cm 2 V –1 s –1 and an I on / I off of 10 4 . The stretchable OFET can withstand up to 50% biaxial stretching and maintain reliable electrical characteristics after stretching and release between 0 and 10% strain for 1000 cycles, and μ is 3.60 cm 2 V –1 s –1 and I on / I off is 2.40 × 10 3 when it is stretched 10% along the channel length direction. At last, we manufactured the OFET for photoelectric detection and demonstrated its imaging application.