Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses
Muhammad Umair Khan, Chaudhry Muhammad Furqan, Jungmin Kim, Sobia Ali Khan, Qazi Muhammad Saqib, Mahesh Y. Chougale, Rayyan Ali Shaukat, Moon Hee Kang, Nobuhiko P. Kobayashi, Jinho Bae, Hoi Sing Kwok
Abstract
The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.