Ultra-High-Density Ferroelectric Array Formed by Sliding Ferroelectric Moiré Superlattices
Wei Sun, Wenxuan Wang, Riming Hu, Changhong Yang, Shifeng Huang, Xiaoning Li, Zhenxiang Cheng
Abstract
2D van der Waals (vdW) materials offer infinite possibilities for constructing unique ferroelectrics through simple layer stacking and rotation. In this work, we stack nonferroelectric GeS 2 and ferroelectric CuInP 2 S 6 to form heterostructures by combining sliding ferroelectric polarization with displacement ferroelectric polarization to achieve multiple polarization states. First-principles calculations reveal that the polarization reversal of the CuInP 2 S 6 component in the GeS 2 /CuInP 2 S 6 /GeS 2 heterostructure can simultaneously drive the switching of sliding ferroelectric polarization, displaying a robust coupling of the two polarizations and leading to the overall polarization switching. Based on this, ferroelectric arrays with a density of 6.55 × 10 12 cm –2 (equivalent to a storage density of 0.7 TB cm –2 ) were constructed in a moiré superlattice, and the polarization strength of array elements was 11.77 pC/m, higher than that of all reported 2D vdW out-of-plane ferroelectrics. High density, large polarization, and electrically switchable array elements in ferroelectric arrays provide unprecedented opportunities to design 2D high-density nonvolatile ferroelectric memories.