Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: A simulation study
Fatima Zahrae Tijent, Mustapha Faqir, Paul L. Voss, Jean‐Paul Salvestrini, A. Ougazzaden
Topics & Concepts
High-electron-mobility transistorMaterials scienceDiamondPassivationSapphireOptoelectronicsTransconductanceSubstrate (aquarium)Gallium nitrideEpitaxyLayer (electronics)Composite materialElectrical engineeringTransistorOpticsVoltageOceanographyLaserEngineeringGeologyPhysicsGaN-based semiconductor devices and materialsThermal properties of materialsSilicon Carbide Semiconductor Technologies