Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory
Naonori Ishihara, Y. Shimada, T. Ochi, S. Seto, Hiroshi Matsuo, H. Yamashita, Satoshi Morita, Masayuki Ukishima, K. Uejima, Y. Arayashiki, Shoichi Kajiwara, A. Murayama, K. Nishiyama, Kikuko Sugimae, Shunsuke Mori, Yuji Saito, Takeshi Shundo, Atsutaka Maeda, H. Kamiya, Yohji Uchiyama, M. Fujiwara, Fumiki Aiso, Ken‐Taro Sekine, Norio Ohtani
Abstract
State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been demonstrated for 3D flash memory with ultra-high (over 300) layers. For the first time, 14$-\mu$m-long macaroni silicon (Si) channels in vertical memory hole are fully single-crystallized. Furthermore, by using newly developed nickel (Ni) gettering technique, the 112 word-line-layer 3D flash memory exhibits cell array performances such as read noise reduction of 40% or more, and 10-times channel conductance without any degradations of cell reliability.