Novel Two-Dimensional ABX<sub>3</sub> Dirac Materials: Achieving a High-Speed Strain Sensor via a Self-Doping Effect
Xingang Jiang, Tao Yang, Fei Ge, Wencai Yi, Xiaobing Liu
Abstract
The pristine semimetal property of two-dimensional (2D) Dirac materials has limited their practical applications in today’s electronic devices. Here we report a new type of 2D Dirac material, termed ABX3 (A = F, Cl, Br, or I; B = P or As; X = C or Si) monolayers. We demonstrate that 14 ABX3 monolayers possess good stability and high Fermi velocities. The FPC3, ClPC3, BrPC3, and FAsC3 monolayers exhibit a pristine n-type self-doping Dirac cone due to the interactions of electrons between the A–B units and C6 rings, which is beneficial for realizing high-speed carriers. Interestingly, the ClPSi3 monolayer exhibits remarkable responses to strain because a self-doping Dirac cone can be induced by relatively small in-plane biaxial strains (−5%), and the current–voltage (I–V) curves verified that the response strength is 11.57 times that of the graphene-based strain sensor at a bias of 1.10 V, indicating that the ClPSi3 monolayer could be used as a potential excellent strain sensor.