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Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers

A. Lachowski, Ewa Grzanka, Szymon Grzanka, R. Czernecki, Mikołaj Grabowski, Roman Hrytsak, G. Nowak, Mike Leszczyński, Julita Smalc‐Koziorowska

2021Journal of Alloys and Compounds13 citationsDOI

Topics & Concepts

Quantum wellMaterials scienceIndiumDopingGalliumBarrier layerDiffusion barrierOptoelectronicsGallium nitrideLight-emitting diodeDiodeLayer (electronics)DiffusionRectangular potential barrierIndium gallium nitrideLaserNanotechnologyOpticsMetallurgyPhysicsThermodynamicsGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor materials and devices
Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers | Litcius