Design and simulation of Cu<sub>2</sub>SnSe<sub>3</sub>-based solar cells using various hole transport layer (HTL) for performance efficiency above 32%
Md. Abdul Monnaf, A. K. M. Mahmudul Haque, Md. Hasan Ali, Sagar Bhattarai, Md. Dulal Haque, Md. Ferdous Rahman
Abstract
Abstract The current research investigates the (Ni/V 2 O 5 /Cu 2 SnSe 3 /In 2 S 3 /ITO/Al) novel heterostructure of Cu 2 SnSe 3 -based solar cell numerically using the SCAPS-1D simulator. The goal of this study is to determine how the proposed cell’s performance will be impacted by the V 2 O 5 hole transport layer and the In 2 S 3 electron transport layer. To enhance cell performances, the effects of thickness, carrier concentration and defect in the absorber layer, electron concentration, hole concentration, total generation and recombination, interface defect, J-V and Q-E characteristics, and operating temperature are investigated. Our preliminary simulation results demonstrate that, in the absence of V 2 O 5 HTL, the efficiency of a conventional Cu 2 SnSe 3 cell is 22.14%, a value that is in suitable agreement with the published experimental values. However, a simulated efficiency of up to 32.34% can be attained by using the HTL and ETL combination of V 2 O 5 and In 2 S 3 , respectively, and optimized device parameters. The ideal carrier concentration and layer thickness for the Cu 2 SnSe 3 absorber layer are, 10 18 cm −3 and 1000 nm, respectively,. However, it is also seen that for optimum device performances, the back-contact metal work function (BMWF) must be higher than 5.22 eV. The outcomes of this contribution may open up useful research directions for the thin-film photovoltaic sector, enabling the production of high-efficient and low-cost Cu 2 SnSe 3 -based PV cells.