Structural Manipulation of Phase Transitions by Self‐Induced Strain in Geometrically Confined Thin Films
Yoav Kalcheim, Coline Adda, Pavel Salev, Min‐Han Lee, Nareg Ghazikhanian, Nicolás M. Vargas, Javier del Valle, Iván K. Schuller
Abstract
Abstract Strain engineering is a well‐known method often used to tune material properties in thin films. The most studied sources of strain are lattice mismatch and differential thermal contraction between the substrate and film. However, in materials which undergo a structural phase transition (SPT), a third and often overlooked source of strain may play a very significant role. If the substrate confines the area of the film, the SPT may induce stress which changes the evolution of the transition. This is a 2D analog of the isochoric phase transition between water and ice, where the freezing point drops below 0 °C. To illustrate this, the prototypical Mott insulator V 2 O 3 which has an SPT coupled to a metal–insulator transition is used to show how self‐induced strain can drastically alter structural and electronic properties. This effect provides an elegant approach for mapping the phase diagram of the SPT and the transitions coupled to it. Moreover, the magnitude of self‐straining is tunable by modifying the substrate morphology. This effect may be important for numerous materials which exhibit an SPT and are subjected to geometrical constraints.