Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field
Ru Zhang, Yan Zhang, Xing Wei, Tingting Guo, Jibin Fan, Lei Ni, Yijun Weng, Zhengdi Zha, Jian Liu, Ye Tian, Ting Li, Li Duan
Topics & Concepts
Heterojunctionvan der Waals forceElectric fieldCondensed matter physicsSemiconductorBand gapElectronMaterials scienceDensity functional theoryPerpendicularElectronic band structureDirect and indirect band gapsElectron mobilityOptoelectronicsChemistryPhysicsComputational chemistryQuantum mechanicsMathematicsMoleculeGeometry2D Materials and ApplicationsMXene and MAX Phase MaterialsBoron and Carbon Nanomaterials Research