Study on the Defect Structure of Carbon‐Doped ZnO Materials
Yuchuan Ding, Liyan Niu, Yong Chen, MaoHua Wang
Abstract
Abstract Zinc oxide materials doped with different carbon contents are successfully synthesized. The results show that the synthesized samples are all ZnO with hexagonal wurtzite structure. The crystallite size increases with the increase of carbon doping. The size of the samples is about 400–500 nm, and the doped samples have the phenomenon of carbon microsphere adhesion. In addition, with the increase of carbon doping, the optical band gap value of the sample decreases from 3.16 to 2.79 eV, showing a decreasing trend. The results of Raman spectroscopy show that the increase of carbon doping can cause the crystal quality of the sample to decrease and the oxygen vacancy concentration to decrease. Photoluminescence spectroscopy finds that all ZnO samples have oxygen vacancy defects and deep‐level double ionized oxygen vacancies. The carbon‐doped samples show an increase in the proportion of interstitial zinc (Zn i ) defects and a decrease in the O Zn concentration of substitutional defects.