A highly reliable and low-power cross-coupled 18T SRAM cell
Shuo Cai, Yan Wen, Jiangbiao Ouyang, Weizheng Wang, Fei Yu, Bo Li
Topics & Concepts
Static random-access memoryNMOS logicNode (physics)Single event upsetReliability (semiconductor)Electronic engineeringTransistorPower (physics)Computer scienceAccess timeSoft errorVoltageElectrical engineeringEngineeringComputer hardwarePhysicsStructural engineeringQuantum mechanicsRadiation Effects in ElectronicsLow-power high-performance VLSI designAdvanced Memory and Neural Computing