GaAs analog master slice
MNIPI, O. Dvornikov, A.A. Pavluchik, Nikolay N. Prokopenko, V. А. Tchekhovski, A. V. Kunts, Vladislav Chumakov
Abstract
For production of circuits with low level of integration meant for extreme operation conditions, we designed GaAs master slice which contains: two DpHEMT with gate width (W) 1000 um and gate length (L) -0,2 um, 20 units of DpHEMT with W/L = 10 um/1 um, 8 units of p-np HBT, two sets of 5 kOhm resistors, set of 1pF capacitors.Amount and list of elements of master slice were chosen for realization of analog devices with unified cascades: tree types of operational amplifiers, comparator, charge sensitive amplifier.Implementation of this analog device is carried out by forming interconnections of integral elements using different masks.Features of transistors volt-ampere characteristics, electrical circuits and main results of master slice analog devices modeling are considered.So, operational amplifier, which uses only DpHEMT, provides gain more then 6·10 4 and range of maximum output voltage around from minus 2 V to plus 2 V with using nonsymmetrical bipolar source voltage minus 3 V/ plus 7 V, and amplifier using DpHEMT and p-n-p HBTgain greater than 2·10 5 and diapason of maximum output voltage around from minus 4 V to plus 4 V with bipolar source voltage minus 5 V/ plus 5 V.