Litcius/Paper detail

Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing

Taewon Hwang, Su‐Hwan Choi, Ki-Cheol Song, Yeonhee Lee, Jae-Hyeok Kwag, Jun-Yeoub Lee, Chang-Kyun Park, Jin‐Seong Park, Jin‐Seong Park

2025Materials Science in Semiconductor Processing8 citationsDOI

Topics & Concepts

Materials scienceHigh-κ dielectricAnnealing (glass)High pressureDielectricTrap (plumbing)DeuteriumOptoelectronicsAnalytical Chemistry (journal)Engineering physicsAtomic physicsMetallurgyOrganic chemistryEngineeringChemistryEnvironmental engineeringPhysicsSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides
Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing | Litcius