Thermal conductivity of SiC-B4C materials obtained by reaction-sintering method
С. Н. Перевислов, E.S. Motaylo, Е. С. Новоселов, Д. Д. Несмелов
Abstract
Abstract In this research, temperature dependences of the thermal conductivity of reaction-bonded SiC – B 4 C composite materials at the temperature range of 293 – 1400 K were investigated. The effect of B 4 C concentration on thermal conductivity is shown. The thermal conductivity of SiC – B 4 C materials were compared with the thermal conductivity of materials based on silicon carbide and boron carbide obtained by different methods.
Topics & Concepts
Thermal conductivityBoron carbideMaterials scienceSilicon carbideSinteringComposite materialAtmospheric temperature rangeConductivityCarbideComposite numberThermal conductivity measurementBoronThermalThermodynamicsChemistryPhysical chemistryOrganic chemistryPhysicsAdvanced ceramic materials synthesisAdvanced materials and compositesRecycling and utilization of industrial and municipal waste in materials production