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Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics

Heesung Kong, Kyoungah Cho, Hosang Lee, Seungjun Lee, Jun-Hyung Lim, Sangsig Kim

2022Materials Science in Semiconductor Processing16 citationsDOI

Topics & Concepts

Materials scienceThin-film transistorOptoelectronicsGate dielectricDielectricHysteresisAmorphous solidStress (linguistics)Subthreshold swingTransistorThreshold voltageElectrical engineeringLayer (electronics)NanotechnologyCondensed matter physicsVoltageCrystallographyEngineeringPhilosophyLinguisticsChemistryPhysicsThin-Film Transistor TechnologiesSemiconductor materials and devicesSilicon and Solar Cell Technologies
Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics | Litcius