Light-Induced Conductance Potentiation and Depression in an All-Optically Controlled Memristor
Xinmiao Li, Zijing Fang, Xing Guo, Ruixiao Wang, Yinxi Zhao, Wenhui Zhu, Liancheng Wang, Lei Zhang
Abstract
Optoelectronic memristors are new multifunctional devices with both electrically tunable and light-tunable synaptic plasticity, attracting great attention as key promising devices for optoelectronic neuromorphic computing systems. At present, the conductance modulation in most optoelectronic memristors is conducted in a hybrid photoelectric mode, suffering some problems such as heat generation and control complexity. Here, an optoelectronic memristor based on the p + -Si/n-ZnO heterojunction is proposed where the conductance can be reversibly modulated in an all-optically controlled mode. The electron detrapping/trapping mechanism at the p + -Si/n-ZnO interface barrier region is presented to explain the light-induced conductance potentiation/depression behavior. Furthermore, some synaptic functions, including excitatory postsynaptic current (EPSC), inhibitory postsynaptic current (IPSC), and paired-pulse facilitation (PPF), are successfully mimicked in the p + -Si/n-ZnO heterojunction memristor, instructing its application potential for optoelectronic neuromorphic computing.