CSTBT™ based Split-Gate RC-IGBT with Low Loss and EMI Noise
Koichi Nishi, Atsushi Narazaki
Abstract
CSTBT™ faces a complex tradeoff among E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on/off</inf> -V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEsat</inf> -SOA and EMI noise. We propose a split-gate CSTBT™ to break up the complex tradeoff and introduce this novel structure to the RC-IGBT for the first time. The Miller capacitance was drastically reduced by using the proposed structure while maintaining the Blocking Voltage, which contributes to approximately a 15% reduction in total loss without any sacrifices of EMI noise and/or SOA.
Topics & Concepts
EMINoise (video)CapacitanceInsulated-gate bipolar transistorElectrical engineeringElectromagnetic interferenceComputer scienceElectronic engineeringVoltageEngineeringPhysicsArtificial intelligenceElectrodeImage (mathematics)Quantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design