Advancing 2D CMOS electronics with high-performance p-type transistors
Jianfeng Jiang, Xudong Zheng, Yifan Liu, Lain‐Jong Li, Lin Xu, Jing Kong, Lian‐Mao Peng
Abstract
Two-dimensional (2D) semiconductors have emerged as promising candidates for enabling complementary metal-oxide-semiconductor (CMOS) technology in post-silicon electronics. However, a significant performance gap between 2D p-type and n-type transistors hampers their immediate industrial application. In this Comment, we discuss recent advances in high-performance 2D p-type transistors, outline a roadmap for their potential development, and propose benchmark performance metrics to guide future progress. The performance of p-type transistors based on 2D semiconductors has not yet reached the level required for the realization of competitive complementary metal-oxide-semiconductor (CMOS) circuits. In this Comment, the authors discuss the recent developments, current challenges, and future outlook of 2D p-type transistors.