Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals
Z. T. Sui, Lingbo Xu, Can Cui, Rong Wang, Xiaodong Pi, Deren Yang, Xuefeng Han
Abstract
To optimize crystal growth rates, it is advisable to choose rotational speeds corresponding to specific melt heights. In this study, rotating the crystal at 20–30 rpm in a double-vortex pattern resulted in a higher average growth rate.
Topics & Concepts
Rotation (mathematics)SeedingVortexRotational speedCrystal (programming language)Flow (mathematics)Materials scienceGrowth rateCrystal growthVolumetric flow rateMechanicsSeed crystalCrystallographySingle crystalThermodynamicsChemistryClassical mechanicsMathematicsGeometryPhysicsComputer scienceProgramming languageSilicon Carbide Semiconductor TechnologiesAluminum Alloys Composites PropertiesAdvanced ceramic materials synthesis