Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe<sub>2</sub>/InSe Heterostructure by a Photogating Effect
Ting Lei, Huayao Tu, Weiming Lv, Haixin Ma, Jiachen Wang, Rui Hu, Qilitai Wang, Like Zhang, Bin Fang, Zhongyuan Liu, Wenhua Shi, Zhongming Zeng
Abstract
/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.
Topics & Concepts
PhotodetectionPhotodetectorAmbipolar diffusionHeterojunctionMaterials scienceOptoelectronicsQuantum efficiencyBroadbandOpticsElectronPhysicsQuantum mechanics2D Materials and ApplicationsPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin Films