Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction
Yali Liu, Xiaoxiang Wu, Wenxuan Guo, Mengge Li, Xinyue Niu, Jiadong Yao, Ying Yu, Boran Xing, Xiaoyuan Yan, Shucheng Zhang, Jian Sha, Yewu Wang
Abstract
Abstract Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A W −1 and a fast response time of 20 μ s at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 10 12 Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.