High-Quality SnSe<sub>2</sub> Single Crystals: Electronic and Thermoelectric Properties
Anh-Tuan Pham, Thi Hoa Vu, Cheng Chang, Thi Ly Trinh, Jieun Lee, Hyejin Ryu, Choongyu Hwang, Sung‐Kwan Mo, Jungdae Kim, Li‐Dong Zhao, Anh Tuan Duong, Sunglae Cho
Abstract
High-quality SnSe2 single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of SnSe2 single crystals were exhibited between the ab plane and the c-axis. At 673 K, the power factor (PF) value along the ab plane is 3.43 μW cm–1 K–2, while it is 0.92 μW cm–1 K–2 along the c-axis. The ratio between thermal conductivities along the ab plane (κab) and c-axis (κc) is on the order of 7.6 at 300 K, while this value is about 5.6 at 673 K. The thermoelectric figure of merit (ZT) in the c-axis (0.15) is higher than that (0.1) along the ab plane, according to the ultralow out-of-plane thermal conductivity. The electronic band structure results, which were examined by angle-resolved photoemission spectroscopy (ARPES) predicted the potential of improving the thermoelectric performance of SnSe2 single crystals by electron doping.