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Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

H. H. Güllü, Dilber Esra Yıldız

2020Journal of Materials Science Materials in Electronics30 citationsDOIOpen Access PDF

Topics & Concepts

Materials scienceDielectricDiodeEquivalent series resistanceElectrical resistivity and conductivitySemiconductorCondensed matter physicsOptoelectronicsElectrical engineeringVoltagePhysicsEngineeringSemiconductor materials and interfacesSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film | Litcius