Effect of contact resistance in organic field‐effect transistors
Yanjun Shi, Jie Liu, Yuanyuan Hu, Wenping Hu, Lang Jiang
Abstract
Abstract Contact resistance ( R C ) is universally present in organic field‐effect transistors (OFETs) and the performance of OFETs can be easily affected by R C , which will result in poor performances such as low mobility ( μ ), large threshold voltage ( V T ), and non‐ideal transfer/output characteristics. In this article, we provide a comprehensive review on the effects of R C in OFETs. We start with a brief introduction of the origin of R C and its effects on OFETs, followed by the commonly used methods for extraction of R C . Then, methods for reducing R C are thoroughly discussed. Especially, fabricating monolayer molecular crystal (MMC) OFETs is highlighted as one of the key solutions to reduce R C effectively. The final section describes the challenges in MMCs preparation and concludes with an outlook for further reducing R C to enhance the performances of OFETs.