Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material
Noy Zakay, Adi Schlesinger, Uri Argaman, Long Truong Nguyen, Nitzan Maman, Bar Koren, Meital Ozeri, Guy Makov, Yuval Golan, Doron Azulay
Abstract
We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.