A Steep-Slope MoS<sub>2</sub>/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
Zhaowu Tang, Chunsen Liu, Xiaohe Huang, Senfeng Zeng, Liwei Liu, Jiayi Li, Yu–Gang Jiang, David Wei Zhang, Peng Zhou
Abstract
In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS2/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 μA·μm/μm (VDS = 1 V) with a current on/off ratio of 108, which shows potential for low-power and high-performance electronics applications.