Research progress and prospect of GaN Schottky diodes
Yu Shao, Fang Zhang, Yunlong He, Peng Liu, Baisong Sheng, Xiaoli Lu, Zhan Wang, Xichen Wang, Yuan Li, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Abstract
Abstract GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.