IGZO synaptic thin-film transistors with embedded AlO<sub> x </sub> charge-trapping layers
Yeojin Lee, Hyerin Jo, Kooktae Kim, Hyobin Yoo, Hyeonjun Baek, Dong Ryeol Lee, Hongseok Oh
Abstract
Abstract We report the fabrication and characterization of indium gallium zinc oxide (IGZO)-based synaptic thin-film transistors. Radio-frequency magnetron-sputtered AlO x thin films are embedded in the IGZO channel as charge-trapping layers to provide synaptic behavior. The voltage pulse introduced at the gate electrodes traps or de-traps charges in the embedded AlO x layer thus modulates the channel current, which in turn leads to the ability to mimic biological synaptic behaviors such as excitonic postsynaptic current, paired-pulse facilitation, and potentiation and depression. Simulation results suggest that the device can perform properly as a synaptic unit in an artificial neural network.