Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
Ramkumar Natarajan, P. Murugapandiyan, N. Vigneshwari, A. Mohanbabu, S. Karthikeyan, S. Ravi
Topics & Concepts
Materials scienceOptoelectronicsHigh-electron-mobility transistorSilicon carbideTransconductanceBuffer (optical fiber)HeterojunctionEpitaxyLayer (electronics)Gallium nitrideSubstrate (aquarium)NucleationLeakage (economics)TransistorNanotechnologyComposite materialElectrical engineeringOceanographyEconomicsChemistryVoltageOrganic chemistryGeologyEngineeringMacroeconomicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties