Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
Yiwei Cao, Quanjiang Lv, Ju Liu, Ju Liu, Tianpeng Yang, Tingting Mi, Xiaowen Wang, Shuti Li, Junlin Liu, Junlin Liu
Topics & Concepts
Materials scienceLight-emitting diodeOhmic contactOptoelectronicsDiodeQuantum efficiencyLayer (electronics)UltravioletOpticsComposite materialPhysicsGaN-based semiconductor devices and materialsGa2O3 and related materialsPhotocathodes and Microchannel Plates