An Efficient Gradient Boosting Approach for PVT Aware Estimation of Leakage Power and Propagation Delay in CMOS/FinFET Digital Cells
Deepthi Amuru, Salman Ahmed, Zia Abbas
Abstract
In this paper, we propose an accurate and computationally efficient Gradient Boosting approach for the estimation of statistical variations aware leakage power and propagation delay in the CMOS/FinFET standard digital cells. The proposed model estimates the leakage power and propagation delay w.r.t variations in process, temperature (-55°C to 125°C) and supply voltage(±10% variations). The distinguishing feature of the proposed approach is its compatibility with both CMOS and FinFET technologies. Moreover, the performance of the proposed model is consistent with various technology nodes. Exhaustive tests report an average error of <; 1% in 16nm CMOS and FinFET standard digital cells w.r.t analog HSPICE simulations with several orders increase in computational speed. Further, the complex cell estimation can be carried out through precharacterized standard cells abstaining longer simulations.