Simple analytical model for accurate switching loss calculation in power MOSFETs using non‐linearities of Miller capacitance
Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, J.R. Pinheiro
Abstract
Abstract A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage. Experimental results are used to validate the model in the 5–500 kHz range. The proposed analytical model is compared to other frequently used methods. Results confirm the accuracy of the proposed model in different voltage levels, using four different MOSFET part numbers, spanning three technologies: SiC, superjunction, and conventional silicon. Because of its simplicity of implementation, it is especially recommended for applications that design converters by evaluating a large database of transistor part numbers.