Halide perovskite memristors for optoelectronic memory and computing applications
Xiaohan Zhang, Yue Wang, Xiaoning Zhao, Zhongqiang Wang, Xuanyu Shan, Haiyang Xu, Yichun Liu
Abstract
Abstract Halide perovskites are considered as promising memristive materials for next‐generation optoelectronic devices. This review concisely summarizes the recent development of halide perovskite memristors and highlights their advancements in optoelectronic applications: light‐induced low power switches, optoelectronic logic operations, optoelectronic neuromorphic computation, and artificial vision systems. Finally, we address the challenges and future development prospects of halide perovskites‐based memristors. This review highlights the promising potential of halide perovskite materials for future optoelectronic memory and computing applications.