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Control of Spin–Orbit Torques by Interface Engineering in Topological Insulator Heterostructures

Frédéric Bonell, Minori Goto, Guillaume Sauthier, Juan F. Sierra, A. I. Figueroa, Marius V. Costache, Shinji Miwa, Yoshishige Suzuki, Sergio O. Valenzuela

2020Nano Letters73 citationsDOIOpen Access PDF

Abstract

topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. These phenomena can play a relevant role at other interfaces, such as those comprising transition metal dichalcogenides.

Topics & Concepts

Condensed matter physicsTopological insulatorFerromagnetismHeterojunctionMagnetizationFerromagnetic resonanceMaterials scienceSpin (aerodynamics)TorqueInsulator (electricity)Field (mathematics)Magnetic fieldPhysicsOptoelectronicsQuantum mechanicsMathematicsPure mathematicsThermodynamicsTopological Materials and PhenomenaMagnetic properties of thin filmsAdvanced Condensed Matter Physics
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