Probing the defect states of LuN1−<i>δ</i>: An experimental and computational study
Sam Devese, K. Van Koughnet, R. G. Buckley, F. Natali, Peter P. Murmu, E.-M. Anton, B. J. Ruck, W. F. Holmes-Hewett
Abstract
We report electrical transport and optical spectroscopy measurements on LuN thin films variously doped with nitrogen vacancies along with the computed band structures of stoichiometric and nitrogen vacancy doped LuN. LuN has been the subject of several recent computational studies; however, the most recent experimental studies regarding its electronic properties are already over four decades old. Here, we bridge the void between computation and experiment with a combined study of LuN focusing on its electronic properties. We find that LuN is a semiconductor with an optical bandgap of ∼1.7 eV. Its conductivity can be controlled by nitrogen vacancy doping, which results in defect states at the conduction band minimum and valence band maximum. These results not only provide information on LuN but also help underpin understanding of the electronic properties of the entire rare-earth nitride series.