Ferroelectric transistors for low-power NAND flash memory
Sijung Yoo, Taek Jung Kim, Seung‐Geol Nam, Donghoon Kim, Kihong Kim, Yunseong Lee, Moonil Jung, Kwang Hee Lee, Seokhoon Choi, Seung Dam Hyun, Min‐Hyun Lee, Seogwoo Hong, Haesung Kim, Ki Deok Bae, Hyangsook Lee, Jung Yeon Won, Dong‐Jin Yun, Byeong Gyu Chae, Wook-Ghee Hahn, Chang Hyun Joo, Sanghyun Jo, Yoonsang Park, Kyung Song, Kyooho Jung, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jee-Eun Yang, Seung-Yeul Yang, Sangwook Kim, Jinseong Heo, Duk‐Hyun Choe
Topics & Concepts
NAND gateTransistorNon-volatile memoryLogic gateMemory cellStack (abstract data type)OptoelectronicsFerroelectric RAMMaterials scienceElectrical engineeringElectronic engineeringFlash (photography)Computer sciencePower (physics)FerroelectricityRacetrack memoryFlash memoryNon-volatile random-access memoryConventional memoryComputer data storageReduction (mathematics)AND gateDiodeShort-channel effectCMOSSemiconductor memoryLow-power electronicsComputer hardwareChannel (broadcasting)Computer memorySemiconductor deviceCapacitorFerroelectric and Negative Capacitance DevicesMagnetic properties of thin filmsSemiconductor materials and devices